15.3: Defect Engineering in n ‐Type Oxide Semiconductor TFTs
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چکیده
SID Symposium Digest of Technical PapersVolume 52, Issue S1 p. 101-101 Sessions: Session 15: Oxide TFT-Defects & Stability (Active-Matrix Devices)Free to Read 15.3: Defect Engineering in n-Type Semiconductor TFTs Guoli Li, Li School Physics and Electronics, Hunan University, Changsha, ChinaSearch for more papers by this authorJiawei He, Jiawei He Technology, Wuhan Wuhan, authorHuiru Wang, Huiru Wang authorDenis Flandre, Denis Flandre The ICTEAM Institute, Université catholique de Louvain, Louvain-la-Neuve, BelgiumSearch authorLei Liao, Corresponding Author Lei Liao [email protected] China author First published: 24 February 2021 https://doi.org/10.1002/sdtp.14391AboutPDF ToolsRequest permissionExport citationAdd favoritesTrack citation ShareShare Give accessShare full text full-text accessPlease review our Terms Conditions Use check box below share version article.I have read accept the Wiley Online Library UseShareable LinkUse link a article with your friends colleagues. Learn more.Copy URL Share linkShare onFacebookTwitterLinked InRedditWechat No abstract is available article. Volume52, IssueS1International Conference on Display Technology (ICDT 2020)February 2021Pages RelatedInformation
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ژورنال
عنوان ژورنال: Sid's Digest Of Technical Papers
سال: 2021
ISSN: ['2154-6738', '2168-0159', '2154-6746', '0097-966X']
DOI: https://doi.org/10.1002/sdtp.14391